Capacitance Diode in Si		rectangular shape	v1.0			Channelstopper
	ni	14500000000	cm-3	valid input fields green		Distance		[µm]
	k	1,38e-023	J/K	Copyright Dr. Michael Pierschel		Depth		[µm]
	T	300	K	Silicon Sensor GmbH Berlin		Doping		cm-3
	eps0	8,854185336	As/Vm*1e-12	Anno 2006	+4930 63992331	Area		µm2
	epsr	11,7	Silizium			depl. channel		[µm]
	q	1,60e-019	As		doping type p or n	total		pF
	Substrat			in Ohmcm			Pad X	Pad Y
	milion	1000000		min 2,25 Ohmcm		Pad over FOX [µm]
	Voltage		V			total area		[µm2]
	Depletion		µm in Si	diode edge radius		FOX thickness		[µm]
	Area		mm2	Length [mm]		threshold voltage		V
	----------------------------------------------------------------------			Width [mm]		Depletion pad		[µm]
	Cdiode		pF	Ufl [V]		FOX capacitance		pF
	Epi-Thickness			Edge length		Depletion cap. pad		pF
	CdiodeEpi		pF		[mm]	Pad cap. total		pF
	Edgecapacitance		pF	spec. edge cap.
	==========================================================
	Ctotal			Cnull
	Diagram voltage		max
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