Capacitance Diode in Silicon		circular shape	v1.0
	ni	1,45e+010	cm-3	valid input fields green
	k	1,38e-023	J/K	Copyright Dr. Michael Pierschel
	T	300	K	Silicon Sensor GmbH Berlin
	eps0	8,854185336	As/V*1e-12	Anno 2006	+4930 63992331
	epsr	11,7	Silizium
	q	1,60e-019	As	min 2,25 Ohmcm	doping type p or n
	Substrat			in Ohmcm
	factor				substrate
	Voltage		V
	Depletion		µm in Si
	Area		mm2	D-Circle [mm]
	---------------------------------------------------------------------------------------------------------------			Ufl [V]
	Cdiode		pF	Edge length [mm]
	Epi-thickness		µm		[mm]
	CdiodeEpi		pF	spec. edge cap.
	Edge cap.		pF           diode	edge radius    [µm]
	===========================================================
	Ctotal			Cnull
	Diagram voltage		max
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